東北大学 末光・吹留研究室の発表論文をご紹介
2001年発表論文
Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy.
Appl. Surf. Sci. 175-176(2001)43-48
Y. Tsukidate and M. Suemitsu
Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth.
Appl. Phys. Lett. 79(2001) pp.746-748
T. Murata, H. Nakazawa, Y. Tsukidate, and M. Suemitsu
Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy.
Appl. Phys. Lett. 79(2001) pp.755-757
H. Nakazawa and M. Suemitsu
Infrared study of SiH4-adsorbed Si(100) surfaces: observation and mode assignment of new peaks.
Jpn. J. Appl. Phys. 40(2001) pp.5206-5210.
Y. Tsukidate and M. Suemitsu