東北大学 末光・吹留研究室の発表論文をご紹介
2010年発表論文
Formation of graphene on 3C-SiC ultrathin film on Si substrates
5th Int. Workshop on New Group IV Semiconductor Nanoelectronics,(2010),15-16
Maki Suemitsu
Growth of Graphene on Silicon Substraes and Its Control over Interfacee Properties
2010 Villa Conference on Interaction Among Nanostructures,(2010),29-29
M.Suemitsu and H.Fukidome
Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures
C.R.Physique,11,(2010),421-432
Taiichi Otsuji, Hiromi Karasawa, Takayuki Watanabe, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii
Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)
Nanoscale Research Letters,5(12),(2010),1888-1891
Shunsuke Abe ? Hiroyuki Handa ? Ryota Takahashi ? Kei Imaizumi ? Hirokazu Fukidome ? Maki Suemitsu
Orientation-mediated control of interfacial structure in epitaxial graphene on silicon substrates
the Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG 2),(2010),23-23
Maki Suemitsu
Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),589-590
M. H. Jung, H. Handa, R. Takahashi, H. Fukidome and M. Suemits
TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),125-126
H. Handa, R. Takahashi, S. Abe, K. Imaizumi, M.H. Jung, S. Ito, H. Fukidome and M. Suemitsu
Effects of tunneling barrier width on the electrical characteristic in Si-QD LEDs
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),744-745
Tae-Youb Kim, Nae-Man Park, Cheol-Jong Choi, Chul Huh, Chang-Geun Ahn, Gun Yong Sung, In-Kyu You, and Maki Suemitsu
Epitaxial Graphene-On-Silicon Logic Inverter
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),880-881
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu and Taiichi Otsuji
Formation of epitaxial graphene on low-index Si substrates
ABSTRACT RJSSS-9,(2010),12-12
M.Suemitsu and H.Fukidome
LEED and XPS observation of formation of epitaxial graphene on Cubic SiC(111)/Si(111)
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),161-161
Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu, Yuden Teraoka, Akitaka Yoshigoe
Discharge instability during the film growth on patterned conductive layers using pulsedplasma CVD under near-atmospheric pressures
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),89-90
Yohei Inayoshi, Kunihiro Nakanishi, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima
Rotated Si(111) Epilayer Growth on 3C-SiC(111)/Si(110) by Monomethylsilane and Disilane
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),91-92
Rolando Vino Bantaculo, Eiji Saitoh, Maki Suemitsu
Logic inverting operations using Epitaxial Graphene-on-Silicon Field Effect Transistors
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010)
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Susumu Takabayashi, Akira Satou, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji
CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),14-15
Hirokazu Fukidome, Ryota Takahashi, Kei Imaizumi, Hiroyuki Handa, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Yoshio Watanabe
SURFACE ORIENTATION DEPENDENCE OF THE STRUCTURAL PROPERTIES OF GRAPHENE GROWN ON Si SUBSTRATES
Abstract in 2nd International Symposium on Graphene Devices ,(2010),36-37
Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Myung-Ho Jung, Shun Ito, Hirokazu Fukidome and Maki Suemitsu
NANOSCALE CONTROL OF STRUCTURE OF EPITAXIAL GRAPHENE BY USING SUBSTRATE MICROFABRICATION
Abstract in 2nd International Symposium on Graphene Devices ,(2010),68-69
Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
INVESTIGATION OF GRAPHENE FIELD EFFECT TRANSISTORS WITH Al2O3 GATE DIELECTRICS FORMED BY METAL OXIDATION
Abstract in 2nd International Symposium on Graphene Devices ,(2010),76-77
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome and Maki Suemitsu
LEED OBSERVATION OF THE FORMATION OF EPITAXIAL GRAPHENE ON 3C-SiC(111) ULTRATHIN FILM ON SiC(111)
Abstract in 2nd International Symposium on Graphene Devices ,(2010),56-57
Ryota Takahashi, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu
OXYGEN-INDUCED REDUCTION OF THE GRAPHITIZATION TEMPERATURE OF SiC SURFACE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),58-59
Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi1 Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka Akitaka Yoshigoe, and Maki Suemitsu
GRAPHENE FORMATION ON 3C-SiC(111) THIN FILM GROWN ON Si(110) SUBSTRATE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),60-61
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi， Kei Imaizumi，Hirokazu Fukidome, Maki Suemitsu
TEMPERATURE-PROGRAMMED-DESORPTION STUDY ON GRAPHENE-ONSILICON PROCESS
Abstract in 2nd International Symposium on Graphene Devices ,(2010),62-63
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi， Kei Imaizumi， Hirokazu Fukidome，Maki Suemitsu
FORMATION OF GRAPHENE BY PULSED-PLASMA CVD UNDER ATMOSPHERIC PRESSURE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),66-67
Kunihiro Nakanishi, Mitsutaka Matsumoto, Yohei Inayoshi, Yuji Uezawa, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima, Hirokazu Fukidome, Maki Suemitsu
CHEMICAL BONDS AT INTERFACES BETWEEN GRAPHENE AND GROUP-10 METALS
Abstract in 2nd International Symposium on Graphene Devices ,(2010),72-73
M. Kubo, S. Takabayashi, R. Takahashi, S. Abe, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji
ROOM TEMPERATURE COMPLIMENTARY LOGIC INVERTER ON EPITAXIAL GRAPHENE-ON-SILICON DEVICE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),92-93
A. El Moutaouakil, H-C Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu and T. Otsuji
DC AND RF CHARACTERISTICS OF GRAPHENE FETS FORMED BY THERMAL DECOMPOSITION OF SiC GROWN ON SILICON SUBSTRATES
Abstract in 2nd International Symposium on Graphene Devices ,(2010),26-27
H.-C. Kang, S. Takabayashi, K. Akagawa, T. Yoshida, S. Abe, R. Takahashi, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji
Epitaxial Formation of Graphene on Si Substrates: From Heteroepitaxy of 3C-SiC to Si Sublimation
ECS Transactions,33(6),(2010),859-867
Maki Suemitsu, Hiroyuki Handa, Eiji Saito, and Hirokazu Fukidome
Changes in chemical bonding of diamond-like carbon filims by atomic-hydrogen exposure
Diamond & Related Materials,19(11),(2010),1387-1392
H.Nakazawa, R.Osozawa, Y.Enta, M.Suemitsu
Deposition of Graphene using Near-Atmospheric Pressure Pulsed-Plasma CVD
23rd International Microprocesses and Nanotechnology Conference Digest,(2010),11D-8-26
K. Nakanishi, M. Matsumoto, Y. Inayoshi, Y. Uezawa, S. Nakajima, T. Uehara, Y. Toyoshima, H. Fukidome, M. Suemitsu
Formation of High-k Dielectric Films on Graphene by Metal Oxidation for Top-Gated Graphene Device Application
23rd International Microprocesses and Nanotechnology Conference Digest,(2010),11D-8-131L
M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome and M. Suemitsu
Formation of Epitaxial Graphene on Mesa-patterned SiC Substrate
23rd International Microprocesses and Nanotechnology Conference Digest,(2010),12B-10-2
H. Handa, R. Takahashi, K. Imaizumi, Y. Kawai, H. Fukidome, Y. Enta, M. Suemitsu, M. Kotsugi, T. Ohkochi, Y. Watanabe and T. Kinoshita
Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials
Journal of Infrared, Millimeter, and Terahertz Waves,(2010)
Hiromi Karasawa, Tsuneyoshi Komori, Takayuki Watanabe, Akira Satou, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, and Taiichi Otsuji
Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate
Japanese Journal of Applied Physics,49(6),(2010),06GG01-1-06GG01-5
Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
Si(111),(110),(100)基板上3C-SiC1薄膜の熱改質によるグラフェン・オン・シリコン形成
表面科学,31(7),(2010),352-358
半田浩之、宮本優、齋藤英司、吹留博一、末光眞希
Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates
Japanese Journal of Applied Physics,49(4),(2010),04DF17-1-04DF17-5
Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, and Taiichi Otsuji
Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane
Materials Science Forum,2010(645-648),(2010),147-150
E. Saito, S. Filimonov, M. Suemitsu
Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane
Materials Science Forum,2010(645-648),(2010),147-150
E. Saito, S. Filimonov, M. Suemitsu
Epitaxial growth processes of graphene on silicon substrates
Japanese Journal of Applied Physics,49(1),(2010),01AH03-1-01AH03-4
Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, and Maki Suemitsu
Epitaxial Graphene on Silicon Substrates
Journal of Physics D,2010,(2010)
M. Suemitsu, H. Fukidome
グラフェン・オン・シリコン技術
日本真空協会 日本真空協会,53(2),(2010)
末光眞希