東北大学 末光・吹留研究室の発表論文をご紹介

2012年発表論文

Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications

2012 MRS Spring Meeting

Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkouchi, Akitaka Yoshigoe, Yuden Teraoka, Yoshiharu Enta, Toyohiko Kinoshita, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

基板相互作用によるグラフェンの電子状態制御

IEICE ED
吹留博一、川合祐輔、末光真希

High performance graphene field-effect transistors with extremely small access length using selfaligned source and drain technique

2012APEMC(2012 Asia-Pacific International Symposium on Electromagnetic Compatibility)

Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji , Maki Suemitsu

Graphene-based devices in terahertz science and technology

J. Phys. D
T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

Japanese Journal of Applied Physics,51(6)(2012),06FD02-1-06FD02-4 http://jjap.jsap.jp/journal/JJAP-51-6S.html

Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment

Japanese Journal of Applied Physics,51(6)(2012),06FD10-1-06FD10-4

Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu

THz Coherent Phonons in Graphene on Silicon

第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)

M. Suemitsu, M. H. Jung and H. Fukidome (Tohoku Univ.), I. Katayama, J. Takeda(Yokohama National Univ.), M. Kitajima (National Defense Academy)

Precise control of epitaxy of graphene by microfabricating SiC substrate

Applied Physics Letters,101,(7),041605-1-041605-5

H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, and M. Suemitsu

Direct measurement of surface stress during Bi-mediated Ge growth on Si

Surface Science,51,(6).06FD10-1-06FD10-4

Hidehito Asaoka a, Tatsuya Yamazaki, Kenji Yamaguchi, Shin-ichi Shamoto, Sergey Filimonov, Maki Suemitsu

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

Nanoscale Research Letters,7,(634),1-5,(2012)

Kim Tae-Youb, Huh Chul, Park Nae-Man, Choi Cheol-Jong, Suemitsu Maki

High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon n

ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)

Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov

Rotated epitaxy of 3C-SiC(111) on Si(110) using monomethylsilane-based gas-source molecular-beam epitaxy

ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)

Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung,Hirokazu Fukidome, Sergey Filimonov, and Maki Suemitsu

Definite Observation of Interfacial Charge Transfer in Graphene Transistor  by Using Soft X-ray 3D Scanning Photoelectron Microscopy

SSDM (2012 International Conference on Solid State Devices and Materials)

Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Masaharu Oshima, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi, and Masaharu Oshima

Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy

VAS14(14th International Conference on Vibrations at Surfaces)

H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu

Epitaxial graphene on silicon

ANM2012(4th International Conference on Advanced Nano Materials)

Maki Suemitsu, Hirokazu Fukidome

Operando Analysis of Graphene Transistor by Soft X-ray 3D Scanning Photoelectron Microscopy

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Maki Suemitsu, Kousuke Nagashio, Akira Toriumi and Masaharu Oshima

Controls of Structural, Electronic, and Pseudofield Properties of Epitaxial Graphene by Microfabrication

Nano-S&T 2011,(2011)

Hirokazu Fukidome, Yusuke Kawai, Masato Kotsugi, Felix Fromm, Takayuki Ide, Takuo Ohkouchi, Hidetoshi Miyashita, Toyohiko Kinoshita, Maki Suemitsu1, Thomas Seyller

Epitaxial Graphene Formation on 3C-SiC/Si Thin Films

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Maki Suemitsu

Oxygen-Plasma Formation of Alumina for a Gate Dielectric in Graphene Field Effect Transistors

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Goon-Ho Park, Myung-Ho Jung, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Electronic structure observations of graphene on 3C-SiC(111)/Si(111)

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Syuya Inomata, Ryota Takahashi, Hiroyuki Handa, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

Epitaxy Of Graphene On Si(100) And Si(111) Faces Simultaneously Formed On Si(100) Substrate

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Ryo Sato, Hirokazu fukidome,Maki Suemitsu

Qualified Graphene-On-Silicon Formation Using 3C-SiC(111)/Si(110) Thick Film By Two-Step Growth

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Shota Sambonsuge, Eiji Saito, Sergey Fimimonov, Hirokazu Fukidome, Maki Suemitsu

Improvement Of Epitaxial Graphene On Silicon By Use Of Vicinal Si (111) Substrates

ISGD-3(3rd Internatinal Symposium on Graphene Devices

Naoki Haramoto, Syuya Inomata, Ryota Takahashi, Akitaka Yoshigoe, Yuden Teraoka, Hirokazu Hukidome, Maki Suemitsu

High Speed Graphene Field-effect Transistors Using Self-aligned Source and Drain Formation Technique

Nano-S&T (Nano Sciences & Technologies2012)

Maki Suemitsu

Spatial Confinement of Epitaxy of Graphene on Microfabricated SiC to Suppress Thickness Variation

AVS 59th International Symposium & Exhibition

H. Fukidome, T. Ide, H. Handa, Y.Kawai, F. Fromm, M. Kotsugi, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, M.Suemitsu

In situ Observation of Graphene during Gate Oxide Formationusing Raman Spectroscopy

MNC2012 (25th International Microprocesses and Nanoetechnology Conference)

R. Sato, H. Fukidome and M. Suemitsu

High Frequency Performance of Graphene Field-Effect Transistors with Extremely Small Access Length

3rd International Symposium on Terahertz Nanoscience (TeraNanoⅢ)

Maki Suemitsu

Onset of discharge instability at patterned conductive regions in pulsed-plasmas under near atmospheric pressures

ISPlasma2013(5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials)

Yohei Inayoshi, Hirokazu Fukidome, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima and Maki Suemitsu

三次元nanoESCAによるグラフェン・デバイスのその場観察に向けて

ISSP-Workshop

吹留博一

基板相互作用を援用したグラフェンのナノ構造・物性制御

表面科学,33,(10),546-551,(2012)

吹留博一

Graphene materials and devices in terahertz science and technology

MRS Bulletin,33,(10),546-551,(2012)

T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhiiu

Epitaxy of Graphene on Si(100) and Si(111) Faces Simultaneously Formed on Si(100) Substrate

SSNS'13

Hirokazu Fukidome

pageTop