東北大学 末光・吹留研究室の発表論文をご紹介
2009年発表論文
Epitaxial Graphene Top-Gate FETs on Silicon Substrates
Proc. ISDRS2009, p.TP1-3,2009,(2009)
Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, and Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji
Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
Japanese Journal of Applied Physics,48(11),(2009),116002-1-116002-8
Hideki Nakazawa , Takeshi Kinoshita, Yuhta Kaimori, Yuhki Asai, Maki Suemitsu, Toshimi Abe, Kanji Yasui, Tetsuo Endoh, Takashi Itoh, Yuzuru arita, Yoshiharu Enta, and Masao Mashita
Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure
ECS Transactions,25,(2009),345-350
Mitsutaka Matsumoto, Syun Ito, Yohei Inayoshi, Shogo Murashige, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, and Yasutake Toyosihima
SR-PES and STM Observation of Metastable Chemisorption State of Oxygen on Si(110)-16×2 Surface
Spring-8 Research Frontiers,2008,(2009),82-83
Maki Suemitsu
Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
Japanese Journal of Applied Physics,48(7),(2009),076509-1-076509-5
Yasuaki Komae, Kanji Yasui, Maki Suemitsu, Tetsuo Endoh, Takashi Ito, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, and Tadashi Akahane
Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate
e-Journal of Surface Science and Nanotechnology,(2009),311-313
Maki Suemitsu, Yu Miyamoto, Hiroyuki Handa, and Atsushi Konno
Formation of MoO2 Nanotube with Rectangular Cross Sections
e-Journal of Surface Science and Nanotechnology,(2009),307-310
Hiroyuki Handa, Toshimi Abe, and Maki Suemitsu
Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy
J. Vac. Sci. Technol. B,27(1),(2009),547-550
M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta,. Yoshigoe and Y. Teraoka
Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure
J. Vac. Sci. Technol. B,27(1),(2009),223-225
M. Matsumoto, Y. Inayoshi, S.Murashige, M. Suemitsu, T. Yara, S. Nakajima,T.Uehara, Y. Toyoshima
Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate
e-Journal of Surface Science and Nanotechnology,7,(2009),107-109
Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Atsushi Konno, Yuzuru Narita, Maki Suemitsu, Hirokazu Fukidome, Takashi Ito, Kanji Yasui, Hideki Nakazawa and Tetsuo Endoh
Normal Pressure PECVD of poly-Si films
Changwon National University(Korea) - Tohoku University(Japan) Joint Symposium,(2009)
M. Matsumoto,Y,Inayoshi,S. Murasige M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima
SR-XPS studies on the kinetics of Si(110) oxidation
Changwon National University(Korea) - Tohoku University(Japan) Joint Symposium,(2009)
Yoshihisa Yamamoto, Yasushi Suzuki, Maki Suemitsu
Graphene-on-Silicon (GOS) as an emerging research material
5th International Conference of Molecular Electronics and Bioelectronics,(2009)
M. Suemitsu
Formation of Mo-oxide nanotubes with rectangular cross sections
Changwon National University(Korea) - Tohoku University(Japan) Joint Symposium,(2009)
Hiroyuki Handa, Takumu Sakurai, Toshimi Abe, and Maki Suemitsu
Controlling Steps on the Si(110) Surfaces
Changwon National University(Korea) - Tohoku University(Japan) Joint Symposium,(2009)
Arnold Alugno, Sergey Filimonov, and Maki Suemitsu
growth of Poly-Si using APCVD
Changwon National University(Korea) - Tohoku University(Japan) Joint Symposium,(2009)
M. Matsumoto, Y. Inayoshi, M. Suemitsu, T. Yara, S. Nakajima,T.Uehara, Y. Toyoshima
Ｓｉ基板上に形成したエピタキシャルグラフェンとその電子デバイス応用
電子情報通信学会 信学技報,108(437),(2009),1-6
尾辻 泰一, 末光 哲也, 姜 顯?K, 唐澤 宏美, 宮本 優, 半田 浩之, 末光 眞希, 佐野 栄一, リズィー マキシム, リズィー ヴィクトール
Ammonia-free deposition of silicon nitride films using pulsed-plasma
J. Vac. Sci. Technol. B,27(1),(2009),223-225
M. Matsumoto, Y. Inayoshi, S.Murashige, M. Suemitsu, T. Yara, S. Nakajima,T.Uehara, Y. Toyoshima
3C-SiC上エピタキシャルグラフェン形成とSi上デバイス応用
応用物理学会 応用電子物性分科会研究会予稿,(2009)
末光眞希