東北大学 末光・吹留研究室の発表論文をご紹介
2005年発表論文
Si(001)上ゲルマン吸着に伴う水素移動とGe/Si原子交換の観察
真空，48(2005)，pp.23-27
村田威史，末光眞希（第30回熊谷記念真空科学論文賞）
Initial adsorption and C-incorporation of organosilanes at Si(001) investigated by temperature-programmed desorption
Applied Surface Science, 242 (2005) pp.270-275.
K. Senthil and M. Suemitsu
Ge-dot formation on Si(111)-7x7 surface with C predeposition using monomethylsilane
Jpn. J. Appl. Phys. Part 2, 44(2005) pp. L123-L125.
Y. Narita, M. Sakai, T. Murata, T. Endoh, and M. Suemitsu
Scanning-Tunneling Microscopy Observation of Monomethylsilane Adsorption on Si(111)-7x7
Jpn. J. Appl. Phys. Part 1, 44 (2005), pp. 1419-1421
M. Sakai, M. Suemitsu, and Y. Narita
MoO2 Hollow Fiber with Rectangular Cross Sections
Jpn. J. Appl. Phys. Part 2- Express Letters, 44(2005), pp. L449-L450.
M. Suemitsu, T. Abe, H.-J. Na and H. Yamane
Incubation-Free Growth of Polycrystalline Si Films by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Discharge under Near Atmospheric Pressure
Jpn. J. Appl. Phys. Part 2- Express Letters, 44(2005), pp. L683-L686
H. Kitabatake, M. Suemitsu, H. Kitahata, S. Nakajima, T. Uehara and Y. Toyoshima
Nucleation of Oxides during Dry Oxidation of Si(001)-2x1 Studied by Scanning Tunneling Microscopy
Jpn. J. Appl. Phys. Part 2- Letters, 44(2005), pp. L1377-L1380
H. Togashi, H. Asaoka, T. Yamazaki, and M. Suemitsu