東北大学 末光・吹留研究室の発表論文をご紹介
2011年発表論文
Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
Japanese Journal of Applied Physics,50(4),(2011)
H. Handa, R. Takahashi, S. Abe, K. Imaizumi, E. Saito, M.H. Jung, S. Ito, H. Fukidome and M. Suemitsu
Temperature-Programmed Desorption Observation of Graphene-on-ilicon Process
Japanese Journal of Applied Physics,50(7),(2011),70102-1-70102-5
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome , and Maki Suemitsu
Low-Energy-Electron-Diffraction and X-ray-Phototelectron -Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate
Japanese Journal of Applied Physics,50(7),(2011),70103-1-70103-6
Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface
Japanese Journal of Applied Physics,50(7),(2011),70105-1-70105-6
Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, and Maki Suemitsu
Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
Japanese Journal of Applied Physics,50(7),(2011),70107-1-70107-5
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, and Maki Suemitsu
Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
Japanese Journal of Applied Physics,50(7),(2011),70111-1-70111-5
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, and Maki Suemitsu
Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
Japanese Journal of Applied Physics,50(7),(2011),70113-1-70113-4
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, and Taiichi Otsuji
Formation of epitaxial graphene on silicon substrates and control of their stacking properties Graphene Week 2011: Fundamental Science of Graphene and Applications of Graphene-Based Devices,(2011)
Suemitsu Maki
Complimentary logic inverter on epitaxial graphene/6H-SiC field effect transistor with diamond-like carbon film as gate dielectrics at room temperature
nature Graphene Conference,(2011)
Amine El Moutaouakil, Susumu Takabayashi, Shuichi Ogawa, Yuji Takakuwa, Hyun-Chul Kang, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu, Eiichi Sano, Tetsuya Suemitsu, Taiichi Otsuji
XTEM characterization of epitaxial graphene formed on non-basal SiC surfaces
International Conference on New Diamond and Nano Carbons2011,(2011)
M Suemitsu, H Handa, F Hirokazu
Mechanical and tribological properties of silicon- andnitrogen-incorporated diamond-like carbon films by plasma-enhanced chemical vapor deposition
International Conference on New Diamond and Nano Carbons2011,(2011)
H Nakazawa, S Miura, R Kamata, S Okuno, Y Enta, M Suemitsu, T Abe
Graphene FETs with SiCN gate stack deposited by PECVD using HMDS vapor
35th Workshop on Compound Semiconductor Devices and Integrated Circuits,(2011)
Tetsuya Suemitsu
Growth of epitaxial graphene on 3C-SiC/Si heterostructure
HeteroSiC-WASMPE2011,(2011)
Maki Sue, Hirokazu Fukidome
Charging effects in silicon nanocrystals embedded in silicon oxycarbide film
International Forum on Functional Materials (IFFM2011),(2011)
Tae-Youb Kim, Soon-Won Jung, Nae-Man Park, In-Kyu You and Maki Suemitsu
Tuning of Structural and Electronic properties of Epitaxial Graphene by Substrate Microfabrication
2011 International Conference on Solid State Devices and Materials (SSDM2011),(2011)
H.Fukidome, H.Handa, M.Kotsugi, Th.Seyller, Y.Kawai, T.Ohkouchi, K.Horn, R.Takahashi, K.Imaizumi, Y.Enta, M.Suemitsu, T.Kinoshita
Graphene/SiC/Si FETs with SiCN Gate Stack
the 220th ECS Meeting & Electrochemical Energy Summit,(2011)
T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, and T. Otsuj
Tunable electronic structure of epitaxial graphene formed on silicon substrates
Nano-S&T 2011,(2011)
M Suemitsu
Tuning of Electronic Properties of Epitaxial Graphene on Microfabrication
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
H. Fukidome, H. Handa, M. Kotsugi, T.Seyller, Y. Kawai, T. Ohkouchi, K. Horn, R.Takahashi, K. Imaizumi, Y. Enta, M. Suemitsu and T. Kinoshita
Effect of SiH4 Pre-annealing on Graphitization of 3C-SiC/Si
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
H. Fukidome, S. Abe, H. Handa, R.Takahashi, K. Imaizumi, S. Sanbonsuge and M. Suemitsu
Impacts of the Access Resistance on the Channel Conduction Characteristics in Graphene FETs
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
M.-H. Jung, C. Quan, H. Fukidome, T.Suemitsu, T. Otsuji and M. Suemitsu
Radio frequency rectifiers based on flexible InGaZnO TFT
Interncational Conference on Advanced Electromaterials 2011,(2011)
Tae-Youb Kim, Soon-Won Jung, Jae Bon Koo, Yong Suk Yang, Su Jae Lee, Woo-Seok Cheong, In-Kyu You, Maki Suemitsu
Graphene in electronics: current status and future outlook
Internationa Display Workshops(IDW'11),(2011)
Maki Suemitsu
Epitaxial growth of graphene on 3C-SiC thin film formed on Si substrates
International Symposium on Surface Science(ISSS-6),(2011)
Maki Suemitsu