東北大学 末光・吹留研究室の発表論文をご紹介
2008年発表論文
Si(110)面上熱酸化膜形成時におけるSiサブオキサイド時間発展のXPSリアルタイム測定
電子情報通信学会技術研究報告, Vol.108, No.80 pp 65-70
山本喜久, 富樫秀晃, 今野篤史, 松本光正, 加藤篤, 齋藤英司, 末光眞希, 寺岡有殿, 吉越章隆
Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
Applied Surface Science, Vol.254(19) pp 6208-6210
M. Matsumoto, Y. Inayoshi, M. Suemitsu, E. Miyamoto, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima
SR-PES and STM observation of metastable chemisorption state of oxygen on Si(110)-16×2 surface
Applied Surface Science, Vol.254(19) pp 6232-6234
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yuden Teraoka, Akitaka Yoshigoe, Hidehito Asaoka, Maki Suemitsu
"Temperature oscillation" as a real-time monitoring of the growth of 3C-SiC on Si substrate
Applied Surface Science, Vol.254(19) pp 6235-6237
Eiji Saito, Atsushi Konno, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, Yuzuru Narita, Maki Suemitsu
Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD
Thin Solid Films, 516 (2008) 659-662
Kazuyuki Tamura, Yuichiro Kuroki, Kanji Yasui, Maki Suemitsu, Takashi Ito, Tetsuro Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, Tadashi Aahane
Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure
Thin Solid Films, 516 (2008) 6673-6676
M. Matsumoto, Y. Inayoshi, M. Suemitsu, T. yara, S. Nakajima, T. Uehara, Y. Toyoshima
Growth of GaN Films by Hot-Mesh Chemical Vapor Deposition Using Ruthenium-Coated Tunsten Mesh
Japanese Journal of Applied Physics, 47(1) (2008) 573-576
Yusuke Fukada, Kanji Yasui, Yuichiro Kuroki, Maki Suemitsu, Takashi Ito, Teturo Endou, Hideki Nakazawa, Yuzuru Narita, Masasuke Takata, and Tadashi Akahane