東北大学 末光・吹留研究室の発表論文をご紹介

2010年発表論文

Formation of graphene on 3C-SiC ultrathin film on Si substrates

5th Int. Workshop on New Group IV Semiconductor Nanoelectronics,(2010),15-16

Maki Suemitsu

Growth of Graphene on Silicon Substraes and Its Control over Interfacee Properties

2010 Villa Conference on Interaction Among Nanostructures,(2010),29-29

M.Suemitsu and H.Fukidome

Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures

C.R.Physique,11,(2010),421-432

Taiichi Otsuji, Hiromi Karasawa, Takayuki Watanabe, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Nanoscale Research Letters,5(12),(2010),1888-1891

Shunsuke Abe ? Hiroyuki Handa ? Ryota Takahashi ? Kei Imaizumi ? Hirokazu Fukidome ? Maki Suemitsu

Orientation-mediated control of interfacial structure in epitaxial graphene on silicon substrates

the Second International Symposium on the Science and Technology of Epitaxial Graphene (STEG 2),(2010),23-23

Maki Suemitsu

Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),589-590

M. H. Jung, H. Handa, R. Takahashi, H. Fukidome and M. Suemits

TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),125-126

H. Handa, R. Takahashi, S. Abe, K. Imaizumi, M.H. Jung, S. Ito, H. Fukidome and M. Suemitsu

Effects of tunneling barrier width on the electrical characteristic in Si-QD LEDs

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),744-745

Tae-Youb Kim, Nae-Man Park, Cheol-Jong Choi, Chul Huh, Chang-Geun Ahn, Gun Yong Sung, In-Kyu You, and Maki Suemitsu

Epitaxial Graphene-On-Silicon Logic Inverter

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),880-881

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu and Taiichi Otsuji

Formation of epitaxial graphene on low-index Si substrates

ABSTRACT RJSSS-9,(2010),12-12

M.Suemitsu and H.Fukidome

LEED and XPS observation of formation of epitaxial graphene on Cubic SiC(111)/Si(111)

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),161-161

Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu, Yuden Teraoka, Akitaka Yoshigoe

Discharge instability during the film growth on patterned conductive layers using pulsedplasma CVD under near-atmospheric pressures

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),89-90

Yohei Inayoshi, Kunihiro Nakanishi, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima

Rotated Si(111) Epilayer Growth on 3C-SiC(111)/Si(110) by Monomethylsilane and Disilane

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),91-92

Rolando Vino Bantaculo, Eiji Saitoh, Maki Suemitsu

Logic inverting operations using Epitaxial Graphene-on-Silicon Field Effect Transistors

Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010)

Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Susumu Takabayashi, Akira Satou, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE

Abstract in 2nd International Symposium on Graphene Devices ,(2010),14-15

Hirokazu Fukidome, Ryota Takahashi, Kei Imaizumi, Hiroyuki Handa, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Yoshio Watanabe

SURFACE ORIENTATION DEPENDENCE OF THE STRUCTURAL PROPERTIES OF GRAPHENE GROWN ON Si SUBSTRATES

Abstract in 2nd International Symposium on Graphene Devices ,(2010),36-37

Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Myung-Ho Jung, Shun Ito, Hirokazu Fukidome and Maki Suemitsu

NANOSCALE CONTROL OF STRUCTURE OF EPITAXIAL GRAPHENE BY USING SUBSTRATE MICROFABRICATION

Abstract in 2nd International Symposium on Graphene Devices ,(2010),68-69

Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe

INVESTIGATION OF GRAPHENE FIELD EFFECT TRANSISTORS WITH Al2O3 GATE DIELECTRICS FORMED BY METAL OXIDATION

Abstract in 2nd International Symposium on Graphene Devices ,(2010),76-77

Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome and Maki Suemitsu

LEED OBSERVATION OF THE FORMATION OF EPITAXIAL GRAPHENE ON 3C-SiC(111) ULTRATHIN FILM ON SiC(111)

Abstract in 2nd International Symposium on Graphene Devices ,(2010),56-57

Ryota Takahashi, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

OXYGEN-INDUCED REDUCTION OF THE GRAPHITIZATION TEMPERATURE OF SiC SURFACE

Abstract in 2nd International Symposium on Graphene Devices ,(2010),58-59

Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi1 Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka Akitaka Yoshigoe, and Maki Suemitsu

GRAPHENE FORMATION ON 3C-SiC(111) THIN FILM GROWN ON Si(110) SUBSTRATE

Abstract in 2nd International Symposium on Graphene Devices ,(2010),60-61

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi,Hirokazu Fukidome, Maki Suemitsu

TEMPERATURE-PROGRAMMED-DESORPTION STUDY ON GRAPHENE-ONSILICON PROCESS

Abstract in 2nd International Symposium on Graphene Devices ,(2010),62-63

Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome,Maki Suemitsu

FORMATION OF GRAPHENE BY PULSED-PLASMA CVD UNDER ATMOSPHERIC PRESSURE

Abstract in 2nd International Symposium on Graphene Devices ,(2010),66-67

Kunihiro Nakanishi, Mitsutaka Matsumoto, Yohei Inayoshi, Yuji Uezawa, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima, Hirokazu Fukidome, Maki Suemitsu

CHEMICAL BONDS AT INTERFACES BETWEEN GRAPHENE AND GROUP-10 METALS

Abstract in 2nd International Symposium on Graphene Devices ,(2010),72-73

M. Kubo, S. Takabayashi, R. Takahashi, S. Abe, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji

ROOM TEMPERATURE COMPLIMENTARY LOGIC INVERTER ON EPITAXIAL GRAPHENE-ON-SILICON DEVICE

Abstract in 2nd International Symposium on Graphene Devices ,(2010),92-93

A. El Moutaouakil, H-C Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu and T. Otsuji

DC AND RF CHARACTERISTICS OF GRAPHENE FETS FORMED BY THERMAL DECOMPOSITION OF SiC GROWN ON SILICON SUBSTRATES

Abstract in 2nd International Symposium on Graphene Devices ,(2010),26-27

H.-C. Kang, S. Takabayashi, K. Akagawa, T. Yoshida, S. Abe, R. Takahashi, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

Epitaxial Formation of Graphene on Si Substrates: From Heteroepitaxy of 3C-SiC to Si Sublimation

ECS Transactions,33(6),(2010),859-867

Maki Suemitsu, Hiroyuki Handa, Eiji Saito, and Hirokazu Fukidome

Changes in chemical bonding of diamond-like carbon filims by atomic-hydrogen exposure

Diamond & Related Materials,19(11),(2010),1387-1392

H.Nakazawa, R.Osozawa, Y.Enta, M.Suemitsu

Deposition of Graphene using Near-Atmospheric Pressure Pulsed-Plasma CVD

23rd International Microprocesses and Nanotechnology Conference Digest,(2010),11D-8-26

K. Nakanishi, M. Matsumoto, Y. Inayoshi, Y. Uezawa, S. Nakajima, T. Uehara, Y. Toyoshima, H. Fukidome, M. Suemitsu

Formation of High-k Dielectric Films on Graphene by Metal Oxidation for Top-Gated Graphene Device Application

23rd International Microprocesses and Nanotechnology Conference Digest,(2010),11D-8-131L

M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome and M. Suemitsu

Formation of Epitaxial Graphene on Mesa-patterned SiC Substrate

23rd International Microprocesses and Nanotechnology Conference Digest,(2010),12B-10-2

H. Handa, R. Takahashi, K. Imaizumi, Y. Kawai, H. Fukidome, Y. Enta, M. Suemitsu, M. Kotsugi, T. Ohkochi, Y. Watanabe and T. Kinoshita

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials

Journal of Infrared, Millimeter, and Terahertz Waves,(2010)

Hiromi Karasawa, Tsuneyoshi Komori, Takayuki Watanabe, Akira Satou, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, and Taiichi Otsuji

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

Japanese Journal of Applied Physics,49(6),(2010),06GG01-1-06GG01-5

Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji

Si(111),(110),(100)基板上3C-SiC1薄膜の熱改質によるグラフェン・オン・シリコン形成

表面科学,31(7),(2010),352-358

半田浩之、宮本優、齋藤英司、吹留博一、末光眞希

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

Japanese Journal of Applied Physics,49(4),(2010),04DF17-1-04DF17-5

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, and Taiichi Otsuji

Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane

Materials Science Forum,2010(645-648),(2010),147-150

E. Saito, S. Filimonov, M. Suemitsu

Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane

Materials Science Forum,2010(645-648),(2010),147-150

E. Saito, S. Filimonov, M. Suemitsu

Epitaxial growth processes of graphene on silicon substrates

Japanese Journal of Applied Physics,49(1),(2010),01AH03-1-01AH03-4

Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, and Maki Suemitsu

Epitaxial Graphene on Silicon Substrates

Journal of Physics D,2010,(2010)

M. Suemitsu, H. Fukidome

グラフェン・オン・シリコン技術

日本真空協会 日本真空協会,53(2),(2010)

末光眞希

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