東北大学 末光・吹留研究室の発表論文をご紹介
2006年発表論文
Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure
ECS Transactions Cancun Vol. 3, "Thin Film Transistor Technologies”,3,(2006)
M. Matsumoto, M. Suemitsu, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima, and S. Itou
Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy
ECS Transations - Cancun, “Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment”,3,(2006)
M. Suemitsu, A. Kato, H. Togashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, Y. Enta, and Y. Narita
Low-temperature Heteroepitaxial Growth of 3C-SiC(111)
ECS Transations - Cancun "Wide Bandgap Semiconductor Materials and Devices 7",3,(2006)
Atsushi Konno, Yuzuru Narita, Takashi Ito, Kanji Yasui, Hideki Nakazawa, Tetsuo Endoh, and Maki Suemitsu
Siエピタキシーの表面化学と成長モデリング
真空,49,(2006),530-534
末光眞希
Si(110)とSi(100)表面の初期酸化過程の違い リアルタイム光電子分光測定から
電子情報通信学会技術研究報告,106,(2006),61
末光眞希、加藤篤、富樫秀晃、今野篤史、山本喜久、寺岡有殿、吉越章隆、成田克
Silicon Thin Film Growth by Pulsed Plasma CVD under Near-Atmospheric Pressure
Mater. Res. Soc. Symp. Proc.,891,(2006),EE07-14.1-EE07-14.6
Hirotatsu Kitabatake, Maki Suemitsu, Setsuo Nakjima, Tsuyoshi Uehara, and Yasutake Toyoshima
ZnO on 3C-SiC
J. Korean Phys. Soc.,49,(2006)
Tsutomu Minegishi, Yuzuru Narita, Shizuka Tokairin, Gakuyo Fujimoto, Hideyuki Suzuki and Zahra Vashaei, Kazushi Sumitani and Osami Sakata, Meongwhan Cho and Takafumi Yao, Maki Suemitsu
Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method
Advanced Materials Research,11/12,(2006),261-264
K. Takahashi, K. Yasui, M. Suemitsu, A. Kato, Y. Kuroki, M. Takata, and T. Akahane