2012年発表論文

Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications

2012 MRS Spring Meeting

Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkouchi, Akitaka Yoshigoe, Yuden Teraoka, Yoshiharu Enta, Toyohiko Kinoshita, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

基板相互作用によるグラフェンの電子状態制御

IEICE ED
吹留博一、川合祐輔、末光真希

High performance graphene field-effect transistors with extremely small access length using selfaligned source and drain technique

2012APEMC(2012 Asia-Pacific International Symposium on Electromagnetic Compatibility)

Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji , Maki Suemitsu

Graphene-based devices in terahertz science and technology

J. Phys. D
T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

Japanese Journal of Applied Physics,51(6)(2012),06FD02-1-06FD02-4 http://jjap.jsap.jp/journal/JJAP-51-6S.html

Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment

Japanese Journal of Applied Physics,51(6)(2012),06FD10-1-06FD10-4

Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu

THz Coherent Phonons in Graphene on Silicon

第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)

M. Suemitsu, M. H. Jung and H. Fukidome (Tohoku Univ.), I. Katayama, J. Takeda(Yokohama National Univ.), M. Kitajima (National Defense Academy)

Precise control of epitaxy of graphene by microfabricating SiC substrate

Applied Physics Letters,101,(7),041605-1-041605-5

H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, and M. Suemitsu

Direct measurement of surface stress during Bi-mediated Ge growth on Si

Surface Science,51,(6).06FD10-1-06FD10-4

Hidehito Asaoka a, Tatsuya Yamazaki, Kenji Yamaguchi, Shin-ichi Shamoto, Sergey Filimonov, Maki Suemitsu

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

Nanoscale Research Letters,7,(634),1-5,(2012)

Kim Tae-Youb, Huh Chul, Park Nae-Man, Choi Cheol-Jong, Suemitsu Maki

High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon n

ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)

Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov

Rotated epitaxy of 3C-SiC(111) on Si(110) using monomethylsilane-based gas-source molecular-beam epitaxy

ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)

Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung,Hirokazu Fukidome, Sergey Filimonov, and Maki Suemitsu

Definite Observation of Interfacial Charge Transfer in Graphene Transistor 　by Using Soft X-ray 3D Scanning Photoelectron Microscopy

SSDM (2012 International Conference on Solid State Devices and Materials)

Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Masaharu Oshima, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi, and Masaharu Oshima

Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy

VAS14(14th International Conference on Vibrations at Surfaces)

H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu